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脉冲激光沉积(PLD)技术凭借其低温生长优势,逐步在GaN薄膜外延领域得到广泛应用。回顾了近年来PLD技术外延生长GaN薄膜的研究进展,包括新型衬底上的GaN薄膜外延研究进展,以及作为克服异质外延的重要手段——缓冲层技术的发展现状。从目前的研究进展可以看出,应用PLD技术制备GaN薄膜及其光电器件具有广阔的发展前景。
Pulsed laser deposition (PLD) technology with its low-temperature growth advantages, and gradually in the field of GaN film has been widely used. The research progress of epitaxial growth of GaN thin films by PLD technology is reviewed, including the research progress of GaN thin films epitaxy on novel substrates and the development of buffer layer technology as an important means to overcome the heteroepitaxy. It can be seen from the current research progress, the application of PLD technology to prepare GaN films and optoelectronic devices have broad prospects for development.