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在用阻抗谱研究PbWO4 (PWO)晶体的介电特性时发现 ,掺La3+ 的PWO晶体中存在典型的介电弛豫现象 ,它被归因于La3+ 进入Pb位并与铅空位VPb缔合成偶极缺陷 .这一结果不仅清楚地证明了PWO晶体中铅空位的存在 ,而且表明阻抗谱测试可以成为PWO晶体微结构研究的有力工具 .以阻抗谱测试为主要工具 ,结合光吸收谱 (包括红外谱 )和x射线光电子能谱 ,阐明了在异价掺杂离子 (3+,4 +,5 +以及 3+和 5 +双掺 )掺杂的PWO晶体中偶极缺陷的形成、类型和转化规律及其与晶体性能的关系 ,以及退火对偶极缺陷演变过程的影响 .所得的结果还与PWO晶体缺陷的计算机模拟结果进行了比较 .
In the study of the dielectric properties of PbWO4 (PWO) crystals by impedance spectroscopy, it is found that there is a typical dielectric relaxation phenomenon in La3 + doped PWO crystals due to La3 + entering Pb sites and associating with Pb vacancies VPb into dipoles This result not only clearly demonstrated the presence of lead vacancies in PWO crystals, but also demonstrated that impedance spectroscopy can be a powerful tool in the study of PWO crystal microstructures.In this paper, impedance spectroscopy (TES) ) And x-ray photoelectron spectroscopy, elucidating the formation, types and transformation rules of dipolar defects in PWO crystals doped with different doped ions (3 +, 4 +, 5+ and 3+ and 5 + double doping) And its relationship with the properties of the crystal as well as the effect of annealing on the evolution of the dipole defects.The results obtained are also compared with the computer simulations of PWO crystal defects.