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根据 4H - Si C高饱和电子漂移速度和常温下杂质不完全离化的特点 ,对适用于 Si和 Ga As MESFET的直流I- V特性理论进行了分析与修正 .采用高场下载流子速度饱和理论 ,以双曲正切函数作为表征 I- V特性的函数关系 ,建立了室温条件下 4H - Si C射频功率 MESFET直流 I- V特性的准解析模型 ,适于描述短沟道微波段 4H- Si CMESFET的大信号非线性特性 ,计算结果与实验数据有很好的一致性 .同时与 MEDICI模拟器的模拟结果也进行了比较 .
According to the characteristics of 4H - Si C high saturation electron drift and incomplete impurity ionization at normal temperature, the theory of DC I - V characteristic applied to Si and Ga As MESFET is analyzed and modified. Theory, the quasi - analytical model of DC I-V characteristics of 4H - Si C RF power MESFET at room temperature is established by using the hyperbolic tangent function as a function of the I - V characteristic. It is suitable for describing the short - CMESFET large signal nonlinearity, the calculated results and experimental data are in good agreement.Meanwhile simulator simulator results were also compared.