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探讨了加固型CC4 0 0 7经60 Coγ射线辐照后NMOS晶体管的退火特性 ,研究了辐照敏感参数随辐照剂量、退火温度、退火时间和退火偏置的变化关系。经相同总剂量辐照的器件 ,高温 10 0℃下的退火速度远大于室温 2 5℃下的退火速度。 2 5～ 2 50℃下的等时退火 ,其退火程度接近 168h的 10 0℃等温退火。对不同的退火情况 ,退火偏置的作用是相似的 ,+5V栅偏压退火速度大于0V栅偏压和浮空退火速度。对氧化物陷阱电荷的退火及界面态陷阱的产生机理进行了分析 ,并对加速实验方法进行了初步探讨。
The annealing characteristics of the annealed NMOS transistor after the strengthening of CC4 0 0 7 irradiated by 60 Co γ-ray were discussed. The relationship between the radiation sensitive parameters and the irradiation dose, annealing temperature, annealing time and annealing bias were studied. The same total dose irradiation of the device, the high temperature annealing at 10 0 ℃ much faster than room temperature 25 ℃ annealing speed. 2 5 ~ 2 50 ℃ isochronal annealing, the annealing temperature is close to 168h isothermal annealing at 100 ℃. For different annealing conditions, the effect of annealing bias is similar, + 5V gate bias annealing speed is greater than 0V gate bias and floating annealing speed. The annealing of oxide traps and the generation mechanism of interfacial states traps are analyzed. The accelerating experimental method is also discussed.