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以Al0.3Ga0.7As/InAlGaAs/Al0.3Ga0.7As压应变量子阱代替传统的无应变量子阱作为有源区,实现降低808 nm半导体激光器的阈值电流,并提高器件的效率。首先优化设计了器件结构,并利用金属有机物化学气相淀积(MOCVD)进行了器件的外延生长。通过优化外延生长条件,保证了5.08 cm片内的量子阱(QW)光致发光(PL)光谱峰值波长均匀性达0.1%。对于条宽为50μm,腔长为750μm的器件,经镀膜后的阈值电流为81mA,斜率效率为1.22 W/A,功率转换效率达53.7%。变腔长实验得到器件的腔损耗仅为2 cm-1,内量子效率达90%。结果表明,压应变量子阱半导体激光器具有更优异的特性。
Substituting the traditional strain-free quantum well as the active region by the Al0.3Ga0.7As / InAlGaAs / Al0.3Ga0.7As compressive-strain quantum well can reduce the threshold current of the 808-nm semiconductor laser and improve the efficiency of the device. First, the device structure is optimized and epitaxial growth of the device is performed by metal organic chemical vapor deposition (MOCVD). By optimizing the epitaxial growth conditions, the peak wavelength uniformity of the photoluminescence (PL) spectrum of quantum wells (QW) in the 5.08 cm slice is guaranteed to be 0.1%. For the device with the width of 50μm and cavity length of 750μm, the threshold current after the coating is 81mA, the slope efficiency is 1.22 W / A and the power conversion efficiency is 53.7%. The cavity length experiment results in a cavity loss of only 2 cm-1 and an internal quantum efficiency of 90%. The results show that the piezoresistive quantum well semiconductor laser has more excellent characteristics.