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将渐进因子分析法应用于俄歇深度剖面的化学态研究。通过对Au／Ni／Si薄膜样品深度剖析过程的渐进因子分析，最终获得了各元素的化学状态和深度分布，并发现Au／Ni／Si样品中Ni／Si界面在室温下已发生反应，生成富Si的NixSi化合物层。样品经真空退火处理后，Ni／Si界面进一步反应生成Ni2Si合金，而原有的NixSi化合物含量相对减少，并向Si基体侧扩展，同时Ni穿透Au膜在样品表面富集。渐进因子分析的结果与XPS分析相一致。
Application of Asymptotic Factor Analysis in the Study of Chemical State of Auger Depth Profile. The chemical state and depth distribution of each element were finally obtained by the progressive factor analysis of the depth analysis of Au / Ni / Si thin films. It was found that the Ni / Si interface in Au / Ni / Si samples reacted at room temperature to form Si-rich NixSi compound layer. After vacuum annealing, the Ni / Si interface further reacted to form Ni2Si alloy, while the original NixSi compound content decreased relatively, and extended to the Si matrix side, while the Ni-penetrating Au film was enriched on the sample surface. The results of the incremental factor analysis are consistent with the XPS analysis.