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研究了在硅基底上采用等离子增强化学汽相淀积（ＰＥＣＶＤ）氮氧化硅（ＳｉＯＮ）所形成的包括通道波导、条波导、倒脊型波导等多种结构的特性。通过对测试结果进一步分析，总结出有关结论并提出一些改进方法。
The properties of a variety of structures, including channel waveguides, strip waveguides, inverted ridge waveguides and the like, formed on a silicon substrate by plasma enhanced chemical vapor deposition (PECVD) of silicon oxynitride (SiON) were investigated. Through the further analysis of the test results, concluded the conclusions and made some improvements.