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对GaN HEMT(High Electron Mobility Transistor)器件进行了0.8和1.2 MeV电子束的辐照效应研究。结果表明,0.8 MeV电子束对器件损伤甚于1.2 MeV电子束,饱和漏电流增大,阈值电压负向漂移主要是由于AlGaN层中电离辐射产生的俘获正电荷以及GaN层中非电离能量损失产生的N、Ga空位所引起的。栅电流增加主要是由于非电离能量损失在AlGaN势垒层形成的电子陷阱和俘获正电荷引起TAT效应(trap-assisted tunneling)所导致。
The radiation effects of 0.8 and 1.2 MeV electron beams on a GaN HEMT (High Electron Mobility Transistor) device were investigated. The results show that the 0.8 MeV electron beam damages the device more than the 1.2 MeV electron beam and the saturation leakage current increases. The negative drift of the threshold voltage is mainly due to the trapped positive charge generated by the ionizing radiation in the AlGaN layer and the non-ionized energy loss in the GaN layer Of N, Ga vacancy caused. The increase of the gate current is mainly caused by the trap-assisted tunneling of the electron traps formed by the non-ionizing energy loss in the AlGaN barrier layer and the positive charge trapping.