建立了抗蚀剂表面曝光量分布与抗蚀剂内部PAC浓度分布之间的关系,通过分析抗蚀剂内部PAC浓度分布特 点,发现了抗蚀剂显影过程中的壁垒效应。在此基础上,提出一种新颖的微浮雕面形控制方法——等PAC浓度曲线面形控 制技术。该方法克服了抗蚀剂显影模型精度以及显影不稳定性对浮雕面形的影响,使光刻胶上微结构浮雕深度超过 100μm,面形均方根误差小于1μm。 The relationship between the distribution of resist surface exposure and the distribution of PAC concentration inside the resist was established. By analyzing the characteristics of PAC concentration distribution in the resist, the barrier effect during the resist development was found out. On this basis, a novel control method of micro-relief face shape is proposed, such as PAC concentration curve face shape control technology. The method overcomes the influence of the precision of the developing model of the resist and the instability of the developing on the relief shape so that the relief depth of the microstructure on the photoresist exceeds 100 μm and the root mean square error of the surface shape is less than 1 μm.