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本文介绍有温度补偿的高增益超宽带混合放大器的设计及性能。这种放大器由采用GaAsFET的6个分布放大器级构成。设计的重点是把增益随着温度的变化减至最小,这一点是通过用随温度变化的电压来偏置FET的栅极实现的。在整个1～18GHz的频率范围和-55°～+85℃的温度范围上,该放大器的增益为35dB,最大偏差为±4dB。这种放大器增益平坦和温度稳定的性能使其适用于各种EW子系统。
This article describes the design and performance of a high-gain, ultra-wideband, mixed-signal amplifier with temperature compensation. This amplifier consists of six distributed amplifier stages using GaAsFETs. The focus of the design is to minimize the gain variation with temperature by offsetting the gate of the FET with a temperature dependent voltage. The amplifier has a gain of 35dB and a maximum deviation of ± 4dB over the entire 1 to 18GHz frequency range and the -55 ° to + 85 ° C temperature range. The amplifier’s flat gain and temperature stability make it suitable for a wide range of EW subsystems.