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碳纳米管(CNT)和衬底的电学接触问题是获得高性能CNT电子器件的一个关键性的问题。本文采用电泳电镀方法制备CNT冷阴极,有效改善了CNT与衬底间接触电阻,增强了碳纳米管场发射性能。电泳电镀法制备的碳纳米管冷阴极场发射的开启电场(电流密度为10μA.cm-2时的电场)由2.95 V.μm-1降低到1.0V.μm-1,在电场为8V.μm-1时电流密度由0.224增加到0.8112mA.cm-2。在电流密度为800μA.cm-2时进行1h的场发射稳定性测试,结果表明,电泳电镀法所得CNT场发射电子源电流密度几乎不变,而且电流密度比较稳定;而只有电泳的方法获得的CNT场发射电子源电流密度波动较大,电流不稳定且呈较快的衰减趋势,1h后减少到原来的75%。采用电泳电镀方法制备CNT阴极,CNT的根部被纳米银颗粒覆盖和包裹,使CNT与衬底接触更加牢固而紧密,又由于银具有很好的导电性,从而大大减小了接触电阻,因此电泳电镀法能大大改善CNT与衬底的电学接触性能。
The electrical contact problem between carbon nanotubes (CNTs) and the substrate is a key issue for obtaining high performance CNT electronic devices. In this paper, CNT cold cathode was prepared by electrophoretic plating, which effectively improved the contact resistance between CNT and substrate and enhanced the field emission performance of CNTs. The open electric field (electric field at a current density of 10μA · cm-2) of the carbon nanotubes prepared by electrophoretic plating decreased from 2.95 V. μm-1 to 1.0 V. μm-1 at an electric field of 8 V. μm -1 current density increased from 0.224 to 0.8112mA.cm-2. The field emission stability test of 1h at a current density of 800μA · cm-2 showed that the current density of the CNT field emission electron source obtained by electrophoretic plating hardly changed, and the current density was relatively stable. Only the electrophoretic method CNT field emission electron source current density fluctuations, current instability and rapid decay trend, after 1h reduced to 75% of the original. The CNT cathode was prepared by electrophoretic plating method. The root of CNT was covered and wrapped by nano-silver particles, which made the contact between CNT and substrate more firm and close. Because of the good conductivity of silver, the contact resistance was greatly reduced. Therefore, Electroplating method can greatly improve the CNT and substrate electrical contact performance.