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晶界Ｃｒ２Ｎ是１２１０℃以上温度加热后的空冷过程中形成的，其沉淀和长大倾向随加热温度升高而增大；１２３０℃以上温度加热后的空冷过程中，无序Ｃｒ２Ｎ可以转变为…ＡＮ２ＢＮ１，３Ａ…有序Ｃｒ２Ｎ，其转变趋势随温度升高而增大；硅含量的显著降低，可抑制晶界Ｃｒ２Ｎ等相的析出和无序结构向有序结构的转变。从电子衍射分析，不能排除…Ａ（Ｎ）ＢＮ１，２，３Ａ…有序结构向上述有序结构的转变。
The grain boundary Cr2N is formed after the air-cooling process heated above 1210 ℃, and its tendency of precipitation and growth increases with the increase of the heating temperature. During the air-cooling process after the heating above 1230 ℃, the disordered Cr2N can be transformed into ... AN2BN1,3A ... Ordered Cr2N, the transformation trend increases with temperature; silicon content significantly reduced, can inhibit the precipitation of grain boundary Cr2N and other disordered structure to the orderly structure of the transformation. From electron diffraction analysis, can not rule out ... A (N) BN1,2,3A ... Ordered structure to the orderly structure of the transformation.