基于感应耦合等离子体干法刻蚀技术,对采用Cl2/BCl3气体组分下GaN刻蚀后的侧壁形貌进行了研究。扫描电镜(SEM)结果表明,一定刻蚀条件下,刻蚀后GaN侧壁会形成转角与条纹状褶皱形貌。进一步实验,观察到了GaN侧壁转角形貌的形成过程;低偏压功率实验表明,高能离子轰击是GaN侧壁转角与条纹状褶皱形貌形成的原因。刻蚀过程中,掩蔽层光刻胶经过高能离子一段时间轰击后,其边缘首先出现条纹状褶皱形貌,并转移到GaN侧壁上,接着转角形貌亦随之出现并转移到GaN侧壁上。这与已公开发表文献认为的GaN侧壁条纹状褶皱仅由于掩蔽层边缘粗糙所引起而非刻蚀过程中形成的解释不同。 Based on the dry etching technique of inductively coupled plasma (ICP), the sidewall morphology after GaN etching with Cl2 / BCl3 gas was studied. Scanning electron microscopy (SEM) results show that under certain etching conditions, the sidewalls of GaN will form corner and striped pleats after etching. Further experiments showed that the formation process of GaN sidewall topography was observed. The experiments with low bias power showed that high energy ion bombardment was the reason for the formation of sidewall angle and striated fold morphology of GaN. During the etching process, the masking layer photoresist strikes the edge of the mask first after being bombarded by the high-energy ions for a period of time, and then migrates to the sidewalls of the GaN, and then the corner topography also appears and is transferred to the GaN sidewall on. This is different from the explanation that the disclosed side-by-side view of the GaN sidewall striped wrinkles is caused only by the roughness of the edge of the masking layer and not formed during the etching.