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通过控制射频磁控溅射时间(5,10和15min)和Ag组分制备了三种厚度、四种Ag体积百分比(5%,10%,15%和20%)的Ag-ZnS复合薄膜。微结构研究表明:较低Ag组分(5%,10%和15%)的薄膜表现为β相ZnS体心立方晶体的(220)择优取向结构,未出现Ag的衍射特征峰;Ag体积分数为20%的复合薄膜同时出现了Ag(111)和ZnS(220)的衍射峰,但峰强度明显降低。分析认为:较低Ag组分薄膜中的Ag成分有助于ZnS结晶或晶体长大,但较高Ag组分薄膜中的Ag对ZnS的结晶起到抑制作用。电学特性研究表明:较低Ag组分复合薄膜导电机制为介质状态;而20%Ag的复合薄膜导电机制为过渡状态,以Ag金属颗粒联并而成的网络结构中的渗透电导为主。
Ag-ZnS composite films with three thicknesses and four Ag percentages (5%, 10%, 15% and 20%) were prepared by controlling the RF magnetron sputtering time (5,10 and 15min) and the Ag content. The microstructure studies show that the thin films with lower Ag content (5%, 10% and 15%) show the (220) preferred orientation structure of β-phase ZnS body-centered cubic crystals without the characteristic diffraction peaks of Ag; The diffraction peaks of Ag (111) and ZnS (220) appeared at the same time in 20% of the composite films, but the peak intensity decreased obviously. The analysis shows that: the Ag component in the lower Ag component film contributes to the crystallization or crystal growth of ZnS, while the Ag in the higher Ag component component inhibits the crystallization of ZnS. The study of electrical properties shows that the conduction mechanism of composite films with lower Ag content is medium state, while the conduction mechanism of 20% Ag composite film is transitional state, and the conductivity is dominated by the combination of Ag metal particles in network structure.