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Fourier红外透射 (FTIR)谱技术是研究氢化非晶硅 (a Si∶H)薄膜中氢的含量 (CH)及硅—氢键合模式 (Si Hn)最有效的手段 .对用等离子体化学气相沉积 (PCVD)方法在不同的衬底温度 (Ts)下制备出的氢化非晶硅薄膜 ,通过红外透射光谱的基线拟合、高斯拟合分析 ,得到了薄膜中的氢含量 ,硅氢键合模式及其组分 ,并分析了这些参量随衬底温度变化的规律 .
Fourier infrared transmission (FTIR) spectroscopy is the most effective way to study the content of hydrogen (CH) and silicon-hydrogen bonding mode (Si Hn) in hydrogenated amorphous silicon (a Si: H) Hydrogenated amorphous silicon thin films prepared by deposition (PCVD) method at different substrate temperatures (Ts) were obtained by baseline fitting and Gaussian fitting analysis of infrared transmission spectra. The hydrogen content, Mode and its components, and analyzed the law of these parameters with the substrate temperature.