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利用同步辐射X射线形貌术对升华法生长的6H-SiC(0001)晶片中的小角晶界与微管缺陷进行了研究。小角晶界在同步辐射中的形貌成直线沿〈11-00〉方向分布。根据螺位错附近的应变场和衍射几何,模拟了基本Burgers矢量大小的螺位错在同步辐射形貌像中的衍衬像,模拟结果与实验结果符合较好。据此指认了基本螺位错,并确定了微管Burgers矢量的大小。
The small-angle grain boundaries and microtubule defects in 6H-SiC (0001) wafers grown by sublimation method were studied by synchrotron radiation X-ray topography. The morphology of small-angle grain boundaries in synchrotron radiation is distributed in the direction of <11-00> in a straight line. According to the strain field and diffraction geometry in the vicinity of the screw dislocation, the derivative image of screw dislocation of the basic Burgers vector in synchrotron radiation topography is simulated. The simulation results are in good agreement with the experimental results. Accordingly, the basic screw dislocation was identified and the size of the Burgers vector of microtubules was determined.