【摘 要】
：
在自行设计、建立的MOCVD系统上,以Cu(hfac)2为反应前驱物在单晶硅上进行铜薄膜的化学气相沉积,并用AFM、SEM对铜核的成长机理进行了研究.结果表明,反应初期,单晶硅上铜核的
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在自行设计、建立的MOCVD系统上,以Cu(hfac)2为反应前驱物在单晶硅上进行铜薄膜的化学气相沉积,并用AFM、SEM对铜核的成长机理进行了研究.结果表明,反应初期,单晶硅上铜核的成长为岛状,反应后期为先层状后岛状.利用XPS对铜薄膜成长的反应机理进行了探讨,由薄膜的Cu2p、O1s、F1s、Si2p谱可推论出,XPS谱中所出现的C=O、OH及CF3/CF2可能为Cu(hfac),当Cu(hfac)2在高温下分解成Cu(hfac)及hfac后,H2还原表面的hfac生成OH基,反应进行一段时间,OH基浓度大到一定的程度后,与Cu(hfac)2热裂解产生的hfac作用生成HO-hfac并脱附,使表面的铜的氧化物被还原以及发生Cu(hfac)2与H2的氧化还原反应.
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