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纳米硅结构使能带的带隙展宽,并形成准直接能带带隙结构.弯曲表面上的某些键合可以在带隙中产生局域电子态,计算表明:纳米硅弯曲表面上的Si-N,Si=O和Si-O-Si键合能够分别在带隙中2.02 eV,1.78 eV和2.03 eV附近形成局域态子带,对应了实验光致荧光谱(PL)中605 nm处的LN线、693 nm处的LO1线和604 nm处的LO2线特征发光.特别是,Si-Yb键合在纳米硅弯曲表面上可以将发光波长调控到光通信窗口,在1310 nm到1600 nm范围形成LYb线特征发光.
The nano-silicon structure enables the bandgap broadening of the band and forms a quasi-direct bandgap structure. Some bonds on the curved surface can generate local electronic states in the bandgap. The calculations show that the Si -N, Si = O and Si-O-Si bonds can form localized state subbands in the band gap of 2.02 eV, 1.78 eV and 2.03 eV, respectively, corresponding to the experimental photoluminescence (PL) at 605 nm Of the LN line, the LO1 line at 693 nm and the LO2 line at 604 nm. In particular, Si-Yb bonding can be used to tune the emission wavelength to the optical communication window at the curved surface of the nanosilver. From 1310 nm to 1600 nm The range forms the LYb line characteristic to glow.