利用扫描隧道显微镜对氢钝化的硅表面进行选择性氧化 ,形成了纳米尺度的线条。利用此氧化物线条作为腐蚀掩模进行化学腐蚀 ,使未氧化区被腐蚀 ,从而实现了图形转移。对此工艺和机理进行了研究。证明此工艺可以进行量子尺寸图形结构的加工 ,进而可以发展成为量子器件集成工艺。为了研究氧化层形成的机理 ,采用了低真空中低能电子束曝光实验。电子探针测量结果表明 ,在低能电子作用区可以测得氧成分 ,而非作用区则无氧成分 ,证明电子对氧化起到主要的作用。场可能起到增强氧化的作用 The hydrogen passivated silicon surface is selectively oxidized by a scanning tunneling microscope to form nanoscale lines. The oxide line is used as an etching mask for chemical etching, so that the unoxidized region is etched, thereby achieving pattern transfer. The technology and mechanism were studied. It is proved that this process can be used to process the structure of quantum size graph and then develop into a quantum device integration process. In order to study the formation mechanism of oxide layer, low-energy low-energy electron beam exposure experiment was used. Electron probe measurements show that the oxygen content can be measured in the low-energy electron-active region and the non-oxygen-free component in the non-active region, demonstrating that electrons play a major role in the oxidation. Field may play a role in enhancing oxidation