基于电迁移法制备了弯曲形状的铝微米带,可作为连接件直接应用于微机电系统和光电器件中。试验所需试样是一层沉积在TiN层的铝膜,并在铝膜的阳极端制作原子排出孔。试验结果表明,铝微米带的生长驱动力来自于铝原子积聚产生的压应力,排出孔的位置靠近铝膜边缘,使铝原子在排出孔两侧的析出速率出现差异,导致铝微米带出现自发弯曲生长现象。 Based on the electromigration method, a curved aluminum microstrip is prepared, which can be directly used as a connector in MEMS and optoelectronic devices. The sample required for the test was a layer of aluminum film deposited on the TiN layer and an atom discharge hole was made on the anode side of the aluminum film. The experimental results show that the driving force for the growth of aluminum microstrip comes from the compressive stress caused by the accumulation of aluminum atoms. The position of the discharge hole is close to the edge of the aluminum film, resulting in the difference in the precipitation rate of aluminum atoms on both sides of the discharge hole, Curved growth phenomenon.