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使用荧光染料TBPe和Ir(ppy)2acac、R-4B两种光染料,采用蓝/红绿双发光层的结构,并结合TPBi对空穴的有效限制作用,制备了结构为ITO/MoO3(X nm)/ADN:(2%)TBPe(30nm)/CBP:Ir(ppy)2acac(14%):R-4B(2%)(5nm)/TPBi(10nm)/Alq3(30nm)/LiF(1nm)/Al(100nm)的磷光与荧光复合的白光OLED,其中,MoO3的厚分别为0、15、20、30和40nm,通过改变MoO3的厚度调控载流子的注入能力,使用空穴阻挡层提高光效;通过测量其电压、电流、亮度、色坐标和电致发光(EL)光谱等参数,研究不同厚度的MoO3对器件发光性能的影响。结果表明,在MoO3厚为20nm的情况下,器件的效率滚降最为平缓。在电压分别为8、9、10、11、12和13V时,器件的色坐标分别为(0.31,0.33)、(0.30,0.33)、(0.29,0.33)、(0.29,0.33)、(0.29,0.33)和(0.29,0.33),具有较高的稳定性,原因为采用蓝/红绿双发光层结构更有利于蓝光的出射,且使用ADN主体材料掺杂蓝色荧光染料TBPe作为蓝光发光层降低三重态-三重态湮灭几率。研究还发现,在电压为11V、器件的亮度为9 744cd/m2和电流密度为11.50mA/cm2时,最大器件的电流效率为7.0cd/A。
The structure of ITO / MoO3 (X) was prepared by using the blue / red green light-emitting layer structure and the effective limitation of hole for TPBi by using two kinds of dyeings of fluorescent dye TBPe and Ir (ppy) 2acac and R- nm) / ADN: (2%) TBPe (30nm) / CBP: Ir (ppy) 2acac (14%): R- 4B (2%) (5nm) / TPBi (10nm) / Alq3 ) / Al (100 nm), wherein MoO3 has thicknesses of 0, 15, 20, 30 and 40 nm, respectively. By adjusting the thickness of the MoO3 and controlling the carrier injection capability, a hole blocking layer The effect of MoO3 with different thicknesses on the luminescent properties of the devices was studied by measuring the parameters of voltage, current, brightness, color coordinates and electroluminescence (EL) spectra. The results show that in the case of MoO3 thickness of 20nm, the efficiency of the device roll off the most gentle. The color coordinates of the devices were (0.31,0.33), (0.30,0.33), (0.29,0.33), (0.29,0.33), (0.29,0.33), 0.33) and (0.29,0.33). The reason for this is that the blue / red-green dual light-emitting layer structure is more conducive to the blue light emission and the ADN host material is doped with the blue fluorescent dye TBPe as the blue light-emitting layer Reduce triplet - triplet annihilation odds. The study also found that the maximum device current efficiency was 7.0 cd / A at a voltage of 11 V, a device brightness of 9 744 cd / m 2 and a current density of 11.50 mA / cm 2.