近期,日本信息通信研究机构NICT发布了Ga_2O_3晶体管研制成功的消息。与SiC和GaN相比,Ga_2O_3在低成本、高耐压且低损耗方面显示出较大的潜力,备受业界关注。Ga_2O_3是金属镓的氧化物,也是一种半导体化合物,目前已发现的结晶形态有α、β、γ、δ、ε五种。其中,β结构最为稳定,与Ga_2O_3的结晶生长及物 Recently, NICT, Japan’s information and communication research institute, announced the successful development of Ga_2O_3 transistor. Compared with SiC and GaN, Ga 2 O 3 shows great potential in terms of low cost, high withstand voltage and low loss, attracting the attention of the industry. Ga_2O_3 is a metal gallium oxide, also a semiconductor compound, has been found in the crystal morphology α, β, γ, δ, ε five. Among them, β structure is the most stable, and Ga 2 O 3 crystal growth and material