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提出一种基于门极电压响应曲线Fréchet距离变化的绝缘栅双极型晶体管(IGBT)模块缺陷诊断方法。在IGBT模块的失效过程中,部分门极杂散参数会发生变化,相应地门极电路的电压响应曲线也会发生变化。利用门极电压在开通时段响应曲线的离散Fréchet距离度量其相似性的变化,并以此作为参数辨识IGBT模块是否存在缺陷。与现有的故障诊断方法相比,其响应时间更充裕。针对典型的缺陷形式进行了实验研究,结果验证了该方法诊断结论的正确性。
A defect diagnosis method of IGBT module based on Fréchet distance variation of gate voltage response curve is proposed. During the failure of the IGBT module, some of the gate-to-gate stray parameters will change. Correspondingly, the voltage response curve of the gate circuit will also change. The gate voltage is used to measure the change of the similarity of the response curve by the discrete Fréchet distance during the ON period and use it as a parameter to identify whether there is a defect in the IGBT module. Compared with the existing fault diagnosis method, the response time is more abundant. An experimental study on the typical forms of defects is carried out. The results verify the correctness of the diagnostic results of this method.