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通过在InP基InxAl1-x As递变缓冲层上生长In0.78Ga0.22As/In0.78Al0.22As量子阱和In0.84Ga0.16As探测器结构,研究了缓冲层中组分过冲对材料特性的影响.原子力显微镜结果表明,在InAlAs缓冲层中采用组分过冲可以使量子阱及探测器样品表面粗糙度都得到降低.对于相对较薄的量子阱结构,X射线衍射倒易空间扫描图和光致发光谱的测量表明,使用组分过冲可以增加弛豫度、减小剩余应力并改善光学性质.而对于较厚的探测器结构,X射线衍射和光致发光谱测试发现使用组分过冲后的材料性质没有明显的变化.量子阱和探测器结构的这些不同特性需要在器件设计应用中加以考虑.
The structure of In0.78Ga0.22As / In0.78Al0.22As quantum wells and In0.84Ga0.16As detectors were grown on the InP-based InxAl1-xAs buffer layer. The effect of component overshoot on the material properties The results of atomic force microscopy show that the use of component overshoot in the InAlAs buffer layer can reduce the surface roughness of the quantum well and the detector sample.For the relatively thin quantum well structure, X-ray diffraction reciprocal spatial scanning and light Measurement of the emission spectrum shows that the use of component overshoot can increase relaxation, reduce residual stress and improve optical properties, whereas for thicker detector structures, X-ray diffraction and photoluminescence spectroscopy test using component overshoot There is no significant change in the properties of the material after these different characteristics of the quantum well and the detector structure need to be considered in device design applications.