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报道了320×256元InAs/GaSb II类超晶格红外双色焦平面阵列探测器的初步结果.探测器采用PN-NP叠层双色外延结构,信号提取采用顺序读出方式.运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为7 ML InAs/7 ML GaSb和10 ML InAs/10 ML GaSb.焦平面阵列像元中心距为30μm.在77 K时测试,器件双色波段的50%响应截止波长分别为4.2μm和5.5μm,其中N-on-P器件平均峰值探测率达到6.0×10~(10) cmHz~(1/2)W~(-1),盲元率为8.6%;P-on-N器件平均峰值探测率达到2.3×10~9 cmHz~(1/2)W~(-1),盲元率为9.8%.红外焦平面偏压调节成像测试得到较为清晰的双波段成像.
The preliminary results of the 320 × 256 element InAs / GaSb II superlattice infrared bifocal focal plane array detector are reported.The PN-NP stacked two-color epitaxial structure detector is used in the detector, and the signal extraction is performed by sequential readout.Mean molecular beam epitaxy Superlattice materials were grown on GaSb substrates with superlattice structure of 7 ML InAs / 7 ML GaSb and 10 ML InAs / 10 ML GaSb, respectively. The focal distance of focal plane array was 30μm. When measured at 77 K, the 50% response cut-off wavelength of the device in the two-color band is 4.2 μm and 5.5 μm, respectively. The average peak detection rate of the N-on-P device is 6.0 × 10 10 cmHz ~ (1/2) W ~ (-1), the blind element rate was 8.6%, the average peak detection rate of P-on-N device was 2.3 × 10 ~ 9 cmHz ~ (1/2) W ~ (-1), and the blind element rate was 9.8%. Infrared focal plane bias adjustment imaging test to get a more clear dual-band imaging.