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应用低压反应离子镀的薄膜制备方法在G e基底上沉积了G e1-xCx薄膜,随着沉积速度在0.1nm/s~0.9nm/s之间变化,G e1-xCx薄膜的硬度在2.12 GPa~11.066 GPa之间可变,当沉积速率为0.9nm/s时,G e1-xCx薄膜最大硬度为11.066 GPa。XRD测试结果表明,沉积的G e1-xCx薄膜均为无定形结构。对薄膜稳定性和牢固度的测试表明,制备的G e1-xCx薄膜在具有较高的硬度的同时,也有良好的性能。
G e1-xCx thin films were deposited on G e substrates by low pressure reactive ion plating. The hardness of G e1-xCx thin films varied from 0.1 nm / s to 0.9 nm / s with the deposition rate of 2.12 GPa ~ 11.066 GPa. When the deposition rate is 0.9 nm / s, the maximum hardness of G e1-xCx film is 11.066 GPa. XRD results show that the deposited G e1-xCx thin films are amorphous. Tests on film stability and firmness show that the prepared G e1-xCx film has good properties at the same time as high hardness.