论文部分内容阅读
采用金属Ni诱导与超高真空化学气相沉积(UHVCVD)相结合的方法,在热氧化硅衬底上生长了多晶锗硅薄膜.利用X射线衍射(XRD)、场发射扫描电镜(SEM)等对多晶锗硅薄膜的质量、表面形貌进行了测试分析,并就生长参数以及金属Ni对薄膜性能的影响进行了研究.结果表明1)在420—500℃范围内,金属Ni具有明显的诱导作用;2)Ni层厚度对薄膜质量及形貌的影响使得晶粒尺寸随Ni厚度增加存在一极大值.在Ni层厚度为60nm时,能够获得晶粒尺寸均匀,晶粒大小为500—600nm,结晶质量良好的多晶锗硅薄膜.
Polycrystalline silicon germanium films were grown on thermal oxide silicon substrates by a combination of metal-induced Ni and ultra-high vacuum chemical vapor deposition (UHVCVD). X-ray diffraction (XRD), field emission scanning electron microscopy The quality and surface morphology of polycrystalline SiGe thin films were tested and analyzed, and the influence of growth parameters and Ni on the properties of the films were studied.The results show that: 1) In the range of 420-500 ℃, 2) The effect of Ni layer thickness on the quality and morphology of the film makes the grain size increase with the Ni thickness there is a maximum value.When Ni layer thickness is 60nm, the grain size can be uniform, the grain size of 500 -600nm, good quality polycrystalline silicon germanium film.