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本文模拟了升华法生长6H-S iC单晶的不同温度场,并进行了相应的生长实验。结果表明:改变石墨坩埚和感应线圈的相对位置,可以改变温度场形状;下移石墨坩埚;可以增大温度场径向温度梯度。在不同的径向温度梯度下,6H-S iC晶体分别以凹界面、平界面和凸界面生长。晶体生长界面的形状和速率影响晶体多型的产生,在平界面,生长速率小于300μm/h的晶体生长条件下,可获得无多型的高质量6H-S iC单晶。
In this paper, different temperature fields of 6H-S iC single crystal grown by sublimation method were simulated and corresponding growth experiments were carried out. The results show that changing the relative positions of the graphite crucible and the induction coil can change the shape of the temperature field and move down the graphite crucible. The radial temperature gradient of the temperature field can be increased. Under different radial temperature gradient, 6H-SiCu crystals grow on concave, flat and convex interfaces respectively. The shape and rate of the crystal growth interface affect the crystal polymorphism. Under the crystal growth condition with the growth rate less than 300 μm / h at the flat interface, a high quality 6H-S iC single crystal with no polytype can be obtained.