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通过射频反应溅射,在氧化铝基板上制备了TaN薄膜电阻。研究了TaN薄膜电阻在不同加载功率密度下表面温度的变化,研究了高温下TaN薄膜氧化所造成的电阻失效。按照混合集成电路规范的测试条件,在环境温度为70℃,TaN薄膜电阻的厚度为0.1μm,氧化铝基板厚度为0.125mm的条件下,TaN薄膜电阻可以耐受4W/mm2的功率密度,或者9.4W/mm2的1min瞬时功率密度冲击。
TaN thin film resistors were prepared on alumina substrates by RF reactive sputtering. The change of surface temperature of TaN thin film under different loading power densities was studied. The failure of TaN thin film caused by oxidation at high temperature was investigated. The TaN film resistance can withstand a power density of 4 W / mm2 at an ambient temperature of 70 ° C, a TaN film resistance of 0.1 μm, and an alumina substrate thickness of 0.125 mm according to the hybrid integrated circuit test conditions, or 9.4W / mm2 1min instantaneous power density impact.