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近年来,GaN基光子晶体发光二极管(light emitting diode,LED)的研究已经取得了一定的进展,利用光子晶体的光子带隙效应和光栅衍射原理,在LED上制作光子晶体结构将会提高出光效率.本文为了提高AlGaInP系LED的光提取效率,分析了常规LED光提取效率受到限制的原因,将光子晶体结构引入了AlGaInP系LED的器件结构设计,通过理论分析与实验验证,结果显示:光子晶体结构对于提高AlGaInP系LED的光提取效率同样起到了明显的效果,引入光子晶体后,LED的输出光强比常规结构LED平均提高了16%.
In recent years, some progress has been made in the research of GaN-based photonic crystal light-emitting diodes (LEDs). Making use of the photonic bandgap effect and grating diffraction principle of photonic crystals, making photonic crystal structures on the LED will improve the light extraction efficiency In order to improve the light extraction efficiency of AlGaInP series LED, the reason why the light extraction efficiency of conventional LED is limited is analyzed. The photonic crystal structure is introduced into the structure design of AlGaInP series LED. The theoretical analysis and experimental verification show that the photonic crystal The structure also plays an obvious role in improving the light extraction efficiency of the AlGaInP-based LED. After the photonic crystal is introduced, the output light intensity of the LED increases by an average of 16% over that of the conventional LED.