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采用低能Ar+离子束辅助沉积方法,在Mo/Si(100)基底上沉积Pt膜,离子/原子到达比分别为0.1、0.2、0.3。若Ar+离子的入射角为0°,XRD谱分析表明,沉积的Pt膜均呈(111)和(200)混合晶向;当Ar+离子的入射角为45°,沉积的Pt膜均呈很强的(111)择优取向。因此若合理控制Ar+离子束的入射角,可在Mo/Si(100)衬底上制备出具有显著择优取向的Pt(111)薄膜。本文采用MonteCarlo方法模拟低能Ar+离子注入Pt单晶所引起的原子级联碰撞过程,得出Ar+离子入射单晶铂(200)晶面时,Ar+离子的溅射率与入射角的关系,对Pt膜择优取向的机理作了初步的探讨和分析。
The Pt film was deposited on a Mo / Si (100) substrate by low energy Ar + ion beam assisted deposition. The ion / atom arrival ratios were 0.1, 0.2 and 0.3, respectively. If the incident angle of Ar + ion is 0 °, XRD spectrum analysis shows that the deposited Pt films show a (111) and (200) mixed orientation. When the incidence angle of Ar + ions is 45 °, the deposited Pt films show a strong (111) preferred orientation. Therefore, if the incident angle of the Ar + ion beam is controlled properly, a Pt (111) thin film with a remarkable preferred orientation can be prepared on the Mo / Si (100) substrate. In this paper, MonteCarlo method was used to simulate the atomic cascade process induced by the implantation of low energy Ar + ions into Pt single crystals. The relationship between the sputtering rate of Ar + ions and incident angle was obtained when Ar + ions were incident on the single crystal platinum (200) Membrane preferred orientation mechanism made a preliminary discussion and analysis.