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蓝宝石晶体已经成为现代工业,尤其是微电子及光电子产业极为重要的衬底材料,提高其化学机械抛光效率是业界无法回避的问题。在CMP系统中,磨料是决定去除速率及表面状态的重要因素。分析了化学机械抛光过程中抛光液中磨料的作用以及抛光机理,在确保表面状态的基础上,研究了抛光液中磨料体积分数、粒径和抛光液的黏度对速率的影响,指出纳米磨料是蓝宝石衬底抛光的最佳磨料。选用合适的磨料体积分数、粒径及抛光液黏度,不仅获得了良好的去除速率,而且有效地解决了表面状态方面的问题。
Sapphire crystal has become a very important substrate material in the modern industry, especially in the microelectronics and optoelectronics industries. Improving the chemical mechanical polishing efficiency is an unavoidable problem in the industry. In CMP systems, abrasive is an important factor that determines the rate of removal and surface condition. Based on the analysis of the role of abrasive in polishing liquid during chemical mechanical polishing and the mechanism of polishing, the influence of abrasive volume fraction, particle size and viscosity of polishing solution on the velocity was studied on the basis of ensuring the surface state. The best abrasive for sapphire substrate polishing. Selection of the appropriate abrasive volume fraction, particle size and slurry viscosity, not only get a good removal rate, but also effectively solve the problem of surface conditions.