论文部分内容阅读
对热氧化制备的TiO2薄膜的低压压敏特性进行了研究。首先利用直流磁控溅射方法在重掺Si衬底上沉积一层金属钛膜,然后在退火炉中热氧化得到TiO2薄膜。XRD分析结果表明,Ti金属膜热氧化所得的TiO2薄膜为金红石结构,当热氧化温度600～800℃时呈现(200)择优取向性。I-V测试结果表明,择优取向的TiO2薄膜相对非择优取向的TiO2薄膜具有更高的压敏阈值电压。进一步分析表明,阈值电压与择优取向性的关系起源于薄膜厚度的变化。
The low pressure-sensitive properties of TiO2 thin films prepared by thermal oxidation were investigated. First, a layer of titanium metal film is deposited on a heavily doped Si substrate by DC magnetron sputtering, and then the TiO2 film is thermally oxidized in an annealing furnace. The XRD results show that the TiO2 film prepared by thermal oxidation of Ti metal film has a rutile structure and exhibits a preferred orientation of (200) at a thermal oxidation temperature of 600 to 800 ° C. The I-V test results show that the preferential orientation of the TiO2 film has a higher voltage-dependent threshold voltage than the non-preferentially oriented TiO2 film. Further analysis shows that the relationship between the threshold voltage and the preferred orientation originates from the change of film thickness.