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根据国内外研究和发展现状 ,对有望突破 1 0 0nm超精细图案光刻分辨率的一些关键技术进行了阐述 ,其中包括曝光技术、掩模技术、光学系统改进和以离轴照明、相位移掩模、多重滤光和图形演算为代表的分辨率增强技术等。
According to the research and development status at home and abroad, some key technologies that are expected to break through the resolution of ultra-fine pattern lithography of 100 nm are described, including exposure technology, mask technology, optical system improvement and off-axis illumination, phase shift mask Mode, multi-filter and graphics calculus as the representative of the resolution enhancement technology.