A novel single event upset reversal in 40-nm bulk CMOS 6T SRAM cells

来源 :Nuclear Science and Techniques | 被引量 : 0次 | 上传用户：yoyo220

【摘要】

：

In advanced technologies, single event upset reversal(SEUR) due to charge sharing can make the upset state of SRAM cells recover to their initial state, which c

【作者】

：

李鹏张民选赵振宇邓全

【机构】

：

CollegeofComputer

【出处】

：

Nuclear Science and Techniques

【发表日期】

：

2015年5期

【关键词】

：

SRAM单元单粒子翻转 CMOS 纳米静态存储器 CAD模拟初始状态状态恢复 Radiation environment 6 T SRAM cell C

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论文部分内容阅读

In advanced technologies, single event upset reversal(SEUR) due to charge sharing can make the upset state of SRAM cells recover to their initial state, which can reduce the soft error for SRAMs in radiation environments. By using the full 3D TCAD simulat

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A novel single event upset reversal in 40-nm bulk CMOS 6T SRAM cells

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