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介绍了用电子束直写技术在GaAs圆片上制作≤0.5μm栅和T形栅的工艺技术,并在GaAs器件的研制中得到应用。
The technology of making ≤0.5μm gate and T-gate on GaAs wafer by electron beam direct writing technology is introduced and applied in the research of GaAs device.