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基于自主研发的碳化硅(SiC)材料外延技术,优化了材料各层结构及参数,减小了Al记忆效应,最终得到了高质量SiC外延片。采用自主研发成熟的SiC MESFET工艺平台,制作了多凹栅器件结构,优化了凹槽尺寸,采用细栅制作技术完成了栅电极制作,最终得到了不同栅宽的SiC MESFET芯片。突破了大栅宽芯片流片、封装及大功率脉冲测试技术,研制成功了微波功率特性良好的MESFET器件。微波测试结果表明,在2 GHz脉冲条件下,0.25 mm栅宽器件,输出功率密度达到8.96 W/mm,功率附加效率达到30%。单胞20 mm大栅宽器件,3.4 GHz脉冲条件下,功率输出达到94 W,功率附加效率达到22.4%。
Based on the self-developed silicon carbide (SiC) epitaxial technology, the structure and parameters of each layer are optimized, and the Al memory effect is reduced. Finally, a high quality SiC epitaxial wafer is obtained. The structure of the multi-concave gate device is fabricated by using the developed SiC MESFET technology platform. The groove size is optimized. The gate electrode is fabricated by the thin gate technology. Finally, SiC MESFET chips with different gate widths are obtained. Break through the Dazhan wide chip flow chip, package and high-power pulse test technology, the successful development of a microwave power MESFET devices. The microwave test results show that at 2 GHz pulse width, the 0.25 mm gate-width device achieves an output power density of 8.96 W / mm and an additional power efficiency of 30%. Single-cell 20 mm wide gate-wide devices, 3.4 GHz power output of 94 W, additional power efficiency of 22.4%.