利用解理法观察双极型集成电路芯片,对隔离沟道电流和结特性退化的原因进行了分析,认为外延层参数的不均匀性是造成隔离沟道电流和结特性退化的主要原因准确控制外延层电阻率是解决隔离沟道电流和结特性退化的关键。 Using the cleavage method to observe the bipolar IC chip, the reason of degradation of the isolation channel current and the junction characteristics was analyzed. It is considered that the inhomogeneity of the epitaxial layer parameters is the main reason for the degradation of the current and the junction characteristics of the isolation channel. Layer resistivity is the key to solving the degradation of current and junction characteristics in isolated trenches.