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通过化学气相沉积(CVD)法在Si衬底上制备石墨烯薄膜,研究了生长温度对薄膜的影响以及石墨烯生长机理。采用傅里叶变换红外光谱(FTIR)、喇曼光谱、光学显微镜(OM)、原子力显微镜(AFM)、扫描电子显微镜(SEM)和X射线光电子谱(XPS)表征石墨烯材料。结果表明,生长温度越高,越有利于Si衬底上石墨烯薄膜的形成和连续。生长过程中,C原子渗入Si衬底表层,在其表面优先形成3C-SiC缓冲层,随后在缓冲层表面重构形成石墨烯。在Si衬底上沉积SiO_2和Si_3N_4覆盖层,发现生长过程中不再出现3C-SiC缓冲层。随着生长温度的增加,石墨烯薄膜缺陷降低,薄膜与衬底之间为范德华力。生长温度1 100℃下结晶质量最好。
Graphene films were prepared on Si substrate by chemical vapor deposition (CVD) method. The effect of growth temperature on the films and the growth mechanism of graphene were investigated. The graphene materials were characterized by Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, optical microscopy (OM), atomic force microscopy (AFM), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The results show that the higher the growth temperature, the more conducive to the formation and continuous graphene thin film on the Si substrate. During the growth process, C atoms penetrate into the surface of the Si substrate, 3C-SiC buffer layer is preferentially formed on the surface of the Si substrate, and then the graphene is reconstructed on the surface of the buffer layer. The deposition of SiO 2 and Si 3 N 4 over the Si substrate revealed that the 3C-SiC buffer layer no longer appeared during growth. With the increase of the growth temperature, the defect of graphene film is reduced, and the van der Waals force between the film and the substrate is decreased. Growth temperature 1 100 ℃, the best quality of the crystal.