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由于SiC材料的理想特性使SiC门极可关断晶闸管(GTO)的发展受到广泛关注。SiC GTO是一种用于控制大电流的高功率开关器件,具有开关速度高、功耗低以及控制电路的复杂程度低等优点,在高压、高温开关电路应用中有着独特的优势。阐述了近十几年来SiC GTO的研究进展,在介绍SiC GTO的等效模型和工作原理的基础上,重点介绍了SiC GTO在阻断电压、传导电流、正向压降和载流子寿命调控等方面的研究现状,详细讨论了提高SiC GTO阻断性能的5种不同的结终端技术和实现载流子寿命调控的具体方法,给出了典型SiC GTO器件的传导电流和正向压降,并对影响CTO性能的主要因素进行了分析。同时,对SiC GTO的未来发展趋势进行了展望。
Due to the desirable properties of SiC materials, the development of SiC gate turn-off thyristors (GTOs) has drawn much attention. SiC GTO is a high-power switching device used to control high current. It has the advantages of high switching speed, low power consumption and low complexity of the control circuit. It has unique advantages in high voltage and high temperature switching circuit applications. Based on the introduction of the equivalent model and working principle of SiC GTO, the research progress of SiC GTO in blocking voltage, conduction current, forward voltage drop and carrier life control And other aspects of the current situation, discussed in detail to improve the blocking performance of SiC GTO 5 different terminal technologies and specific methods to achieve carrier life regulation, the conduction current and forward voltage drop of a typical SiC GTO device is given, and The main factors affecting the performance of CTO are analyzed. At the same time, the future development trend of SiC GTO is prospected.