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在淀积有纳米间隙栅电极、源电极和漏电极的衬底上生长量子点 ,制作出多岛结构的单电子晶体管 .在 77K温度下对源漏特性进行了测试 ,得到了库仑阻塞特性 .并且成功抑制了单岛单电子晶体管中易出现的共隧穿效应 ,观察到较大的库仑阈值电压 .对试验数据进行了分析 ,阐明了岛的不同结构组态产生的不同输运效果 .
Quantum dots were grown on the substrate deposited with nanogap gate electrode, source electrode and drain electrode to fabricate a single-electron transistor with multi-island structure.The source-drain characteristics were tested at 77K, and the Coulomb blocking characteristic was obtained. The co-tunneling effect in single island single electron transistor was successfully suppressed, and a larger Coulomb threshold voltage was observed.The experimental data were analyzed to illustrate the different transport effects caused by different structural configurations of islands.